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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jiang, H. Song, H. Cao, L.Z. Li, Z.M. Li, D.B. Miao, G.Q. Sun, X.J. Chen, Y.R. |
| Copyright Year | 2010 |
| Description | Author affiliation: Key Lab. of Excited State Processes, Chinese Acad. of Sci., Changchun, China (Jiang, H.; Song, H.; Cao, L.Z.; Li, Z.M.; Li, D.B.; Miao, G.Q.; Sun, X.J.; Chen, Y.R.) |
| Abstract | Summary form only given. Large scale $SiC/SiO_{2}$ nanowires have been synthesized on Si (100) by the reaction of methane with silica using iron as catalyst. The growth time was 10 mins and the growth temperature was around 1,250°C in a normal atmospheric pressure. Detailed investigation with scanning electron microscopy (SEM), energy-dispersed X-ray (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirm that the $SiC/SiO_{2}$ nanowires consist of a uniform cubic β-SiC core and an amorphous silica shell. The $SiC/SiO_{2}$ nanowires have a diameter about 30~50 nm and length about 10 μm. Analysis of SEM and TEM results indicated that the nanowires have a large growth rate than that reported. The large growth rate may owe to two reasons: One may be attributed to plentiful carbon atoms (Methane as the carbon resource can be completely decomposed at a temperature 1250°C) and the other may be the hydrogen gas supplied at the growth process. |
| Starting Page | 380 |
| Ending Page | 380 |
| File Size | 530945 |
| Page Count | 1 |
| File Format | |
| ISBN | 9781424466450 |
| e-ISBN | 9781424466443 |
| DOI | 10.1109/IVESC.2010.5644133 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-10-14 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Synthesis Growth rate SiC/SiO2 core-shell Nanowires Substrates |
| Content Type | Text |
| Resource Type | Article |
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