Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires

Content Provider	Semantic Scholar
Author	Thabethe, Sibongiseni Stanley Arendse, Christopher J. Mwakikunga, Bonex Wakufwa
Copyright Year	2014
Abstract	Abstract Advanced core–shell FeSi@SiO x nanowires are observed when FeCl 3 vapour is made to flow over a SiO 2 /Si substrate at 1100 °C. The thickness of the SiO x sheath ( δ ′) is found to depend inversely as the period of time of HF etching of the SiO 2 /Si substrate. When such substrates are overlaid with a thin film of Au, the nanowires obtained are found to be pure SiO 2 . The Au layer disappears as vapour of AuCl 3 as its melting point is at 298 °C. Proposed mechanisms of growth in all the various scenarios are identified to be governed by self-catalyzed vapour–solid (VS) mechanism.
Starting Page	221
Ending Page	226
Page Count	6
File Format	PDF HTM / HTML
DOI	10.1016/j.jallcom.2014.07.115
Volume Number	616
Alternate Webpage(s)	https://researchspace.csir.co.za/dspace/bitstream/handle/10204/7814/Thabethe_2014_ABSTRACT%20ONLY.pdf;jsessionid=D34576BCFC49412B73F3F0E7AADE52D8?sequence=1
Alternate Webpage(s)	https://doi.org/10.1016/j.jallcom.2014.07.115
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article