NDLI: Highly-Crystallized Ge:H Film Growth from GeH4 VHF-ICP - Crystalline Nucleation Initiated by Ni-Nanodots

Content Provider	IEEE Xplore Digital Library
Author	Makihara, K. Jin Gao Sakaike, K. Hayashi, S. Deki, H. Ikeda, M. Higashi, S. Miyazaki, S.
Copyright Year	2012
Abstract	The formation of highly-crystallized germanium thin films at temperatures as low as 250 ºC has attracted much attention because of their potential advantages in the application to active and contact layers of thin film transistors and solar cells. Due to a strong requirement of the film productivity, intense effort to increase the growth rate with less deterioration of the crystallinity has been made by using high density plasmas such as very high frequency plasma and inductively-coupled plasma (ICP). However, to suppress the formation of an amorphous incubation layer on quartz remains a primary concern. In this work, we have studied the impact of Ni nanodots (NDs) on quartz in consideration of metal-induced crystallization on the initiation of crystalline nucleation and growth from VHF-ICP of GeH4. An AFM image for an as-sputtered Ni film shows a fairly smooth surface morphology with a root-mean-square (RMS) roughness of ~0.2 nm, which is almost identical to that for a quartz substrate. By exposing the Ni film to the VHF-H2 plasma under a gas pressure of 0.26 Torr with a VHF powers of 500 W without any extra heating, the formation of Ni-NDs with an areal dot density of ~3.3x1011 cm-2 and an average dot height of ~5.6 nm was clearly observable. It is likely that migration of Ni atoms is driven by local heating caused by the efficient recombination of atomic hydrogen on pure Ni surface. To study an impact of Ni-NDs on an initial nucleation and on the subsequent grain growth, Ge:H films were grown on Ni-NDs/quartz substrates from VHF-ICP of H2-diluted GeH4 for 5 sec at 250 °C and characterized by Raman scattering measurements. As shown in the Raman scattering spectra from the film surface side, the formation of Ge crystalline network was confirmed from a characteristic Raman signal peaked at ~300 cm-1 due to TO phonons in crystalline Ge. The crystallinity determined as a ratio of the integrated intensity of the crystalline phase to disordered one reaches over 80 % for the film grown on Ni-NDs/quartz at 250 ºC. Notice that no detectable incubation layer is formed at 250 ºC as confirmed from the backside measurements, where the crystallinity reaches over ~90 %. And cross-sectional SEM observations show that growth rate as high as ~15 nm/sec was achieved. The formation of crystalline grains with an average diameter of ~70 nm was also confirmed. For the Ge:H films deposited on pre-cleaned quartz substrate under the same conditions, the crystallinity as low as ~23 % was obtained even near the film surface. These results indicate that underlying Ni-NDs on quartz initiate crystalline nucleation in very early stages of film deposition, which leads to the high-rate growth of highly-crystallized Ge network.
Starting Page	1
Ending Page	2
File Size	293187
Page Count	2
File Format	PDF
ISBN	9781457718649
e-ISBN	9781457718656
e-ISBN	9781457718632
DOI	10.1109/ISTDM.2012.6222497
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-04
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Films Raman scattering Nickel Plasma temperature Substrates Surface treatment
Content Type	Text
Resource Type	Article

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