NDLI: Ultimate Scaling Projection of Cylindrical 3D SONOS Devices

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2015 IEEE International Memory Workshop (IMW)

2014 IEEE 6th International Memory Workshop (IMW)

2013 5th IEEE International Memory Workshop

2012 4th IEEE International Memory Workshop

3D Trigate 1T-DRAM Memory Cell for 2x nm Nodes

A 48 Mhz. 64kB FRAM with Sufficient Ferroelectric Domain Polarization

A 64Gb NAND Flash Memory with 800MB/s Synchronous DDR Interface

A Dynamic Programming Method with Programming Current Clamped in Embedded P-Channel SONOS Flash Memory

A Framework for Reliability Assessment in Multilevel Phase-Change Memory

A Investigation of E/W Cycle Characteristics for 2y-nm MLC NAND Flash Memory Devices

A New Cell-Type String Select Transistor in NAND Flash Memories for under 20nm Node

A Ratio-Less 10-Transistor Cell and Static Column Retention Loop Structure for Fully Digital SRAM Design

Advanced Hot-Carrier Injection Programming Scheme for Sub 20nm NAND Flash Cell and beyond

AlOx-Based Resistive Switching Device with Gradual Resistance Modulation for Neuromorphic Device Application

An Investigation of Abnormal Program Phenomena with S/D Junctions and Dopant Profiles for Sub-20 nm NAND Flash Memory Devices

An Update on Emerging Memory: Progress to 2Xnm

Architecture of 3D Memory Cell Array on 3D IC

Asymmetry, Vacancy Engineering and Mechanism for Bipolar RRAM

Barrier Breakdown Mechanisms in MgO-Based Magnetic Tunnel Junctions under Pulsed Conditions

Bipolar-Switching Model of RRAM by Field- and Temperature-Activated Ion Migration

Control Gate Length, Spacing and Stacked Layer Number Design for 3D-Stackable NAND Flash Memory

DRAM Using Crystalline Oxide Semiconductor for Access Transistors and Not Requiring Refresh for More Than Ten Days

Dual-Interface Memory for RF Memory Tag Systems

Effect of Inserting Al2O3 Layer and Device Structure in HfO2-Based ReRAM for Low Power Operation

Electrical and Thermal Behavior of Tellurium Poor GeSbTe Compounds for Phase Change Memory

Electro-Mechanical Diode Performance and Scaling for Cross-Point Non-Volatile Memory Arrays

Embedded Nonvolatile Memories: A Key Enabler for Distributed Intelligence

Experimental Investigation and Empirical Modeling of the Set and Reset Kinetics of Ag-GeS2 Conductive Bridging Memories

Flash Memory at a Cross-Road: Challenges & Opportunities

Flexible and Transparent Memory: Non-Volatile Memory Based on Graphene Channel Transistor for Flexible and Transparent Electronics Applications

HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention

High Density NAND Phase Change Memory with Block-Erase Architecture to Compromise Write and Disturb Requirements

High Density Spin-Transfer Torque (STT)-MRAM Based on Cross-Point Architecture

High Performance MAHAHOS Memory Devices: Charge Trapping and Distribution in Bandgap Engineered Structure

High Performance Nanocrystal Based Embedded Flash Microcontrollers with Exceptional Endurance and Nanocrystal Scaling Capability

Highly Reliable Flash Memory with Self-Aligned Split-Gate Cell Embedded into High Performance 65nm CMOS for Automotive & Smartcard Applications

Highly Scalable 3-D Vertical FG NAND Cell Arrays Using the Sidewall Control Pillar (SCP)

High-Speed and Multi-Bit Resistive Switching Brought about by Migration of Hydrogen Ions in Resistive Random Access Memory Consisting of Bi2Sr2CaCu2O8+delta Single Crystal

Hot Forming to Improve Memory Window and Uniformity of Low-Power HfOx-Based RRAMs

Impact of Forming Pulse Geometry and Area Scaling on Forming Kinetics and Stability of the Low Resistance State in HfO2-Based RRAM Cells

Inherent Issues and Challenges of Program Disturbance of 3D NAND Flash Cell

Interface Engineering of PCM for Improved Synaptic Performance in Neuromorphic Systems

Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures

Investigation of Cycling-Induced VT Instabilities in NAND Flash Cells via Compact Modeling

Investigation of Over-Reset Programming in Phase Change Memory

Investigation of the Electrical Performances of µtrench PCM at High Operating Temperature

Investigation of Verify-Programming Methods to Achieve 10 Million Cycles for 50nm HfO2 ReRAM

Lowering the Reset Current and Power Consumption of Phase-Change Memories with Carbon-Doped Ge2Sb2Te5

Memory Architecture of 3D Vertical Gate (3DVG) NAND Flash Using Plural Island-Gate SSL Decoding Method and Study of it's Program Inhibit Characteristics

Mobility Enhancement of Peripheral PMOSFET Using e-SiGe Source and Drain in Sub-50nm DRAM

Modeling of Threshold Voltage Drift in Phase Change Memory (PCM) Devices

Monocrystalline Floating Gate Structure for Ultimate NAND Flash Scaling Towards the 12nm Node

Multilayer Graphene as Charge Storage Layer in Floating Gate Flash Memory

Oxide-Based RRAM: A Novel Defect-Engineering-Based Implementation for Multilevel Data Storage

Physical Modeling and Analysis on Improved Endurance Behavior of P-Type Floating Gate NAND Flash Memory

Physical Understanding of Program Injection and Consumption in Ultra-Scaled SiN Split-Gate Memories

Recent Advances in Spin Torque MRAM

Resistance Drift Model for Conductive-Bridge (CB) RAM by Filament Surface Relaxation

Retention Model for High-Density ReRAM

Scalability Study of Fully Planarized Hybrid Floating Gate Flash Memory Cells with High-k IPD

Scaling Challenges for the Cross-Point Resistive Memory Array to Sub-10nm Node - An Interconnect Perspective

Scaling Challenges in NAND Flash Device toward 10nm Technology

Spacer-Defined EUV Lithography Reducing Variability of 12nm NAND Flash Memories

Static Noise Margin and Power-Gating Efficiency of a New Nonvolatile SRAM Cell Based on Pseudo-Spin-Transistor Architecture

Study of One Dimension Thickness Scaling on Cu/HfOx/Pt Based RRAM Device Performance

Sub-Nanosecond Precessional Switching in a MRAM Cell with a Perpendicular Polarizer

Ultimate Scaling Projection of Cylindrical 3D SONOS Devices

Understanding of Trap-Assisted Tunneling Current - Assisted by Oxygen Vacancies in RuOx/SrTiO3/TiN MIM Capacitor for the DRAM Application

Understanding the Role of the Ti Metal Electrode on the Forming of HfO2-Based RRAMs

2011 3rd IEEE International Memory Workshop (IMW)

2010 IEEE International Memory Workshop

2009 IEEE International Memory Workshop

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