NDLI: A Dynamic Programming Method with Programming Current Clamped in Embedded P-Channel SONOS Flash Memory

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2011 3rd IEEE International Memory Workshop (IMW)

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A Dynamic Programming Method with Programming Current Clamped in Embedded P-Channel SONOS Flash Memory

Content Provider	IEEE Xplore Digital Library
Author	Shang-Wei Fang Ying-Je Chen Cheng-Jye Liu Zheng-Jie Lee Zhi-Bin Kuo Hong-Yi Liao Yu-Shiung Tsai Wein-Town Sun Yuan-Tai Lin
Copyright Year	2012
Abstract	A dynamic programming method of Channel Hot Hole Induced Hot Electron (CHHIHE) injection with programming-current-clamped (PCC) scheme on P-channel SONOS application is proposed in this paper. With the PCC scheme, a better programming efficiency and device reliability can be realized, and consequently up to 85% programming current reduction and over one order of retention lifetime improvement can be achieved. Moreover, it can also provide a tightened program state distribution with the benefit of lower programming power consumption, smaller high voltage pumping circuit area and better read sensing window.
Starting Page	1
Ending Page	4
File Size	554494
Page Count	4
File Format	PDF
ISBN	9781467310796
e-ISBN	9781467310819
DOI	10.1109/IMW.2012.6213628
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-05-20
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	SONOS devices Programming Hot carriers Dynamic programming Reliability Arrays Sun
Content Type	Text
Resource Type	Article

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