NDLI: Influence of gate engineering on the analog and RF performance of DG MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Mohankumar, N. Syamal, B. Sarkar, C.K. Ravi, S.
Copyright Year	2008
Description	Author affiliation: Dept of Electron. & Commun. Eng., Chettinad Coll. of Eng. & Technol., Karur (Ravi, S.) \|\| Dept of Electron.&Telecommun. Eng., Jadavpur Univ., Kolkata (Mohankumar, N.; Syamal, B.; Sarkar, C.K.)
Abstract	The design of analog and radio-frequency (RF) circuits in CMOS technology has become increasingly more difficult as device modeling faces new challenges in the deep sub micrometer regime and emerging circuit applications. Double gate MOSFETs show greater promise in this regard with improved short channel effects, high gate control and reduced leakage. But still they may be engineered for better performances in case of analog design. In this paper, we explore the influence of gate engineering on the analog and RF performances of Double gate MOSFETs for mixed signal applications.
Starting Page	1
Ending Page	4
File Size	2398415
Page Count	4
File Format	PDF
ISBN	9781424435944
DOI	10.1109/ICCCNET.2008.4787745
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-12-18
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Integrated circuit technology CMOS analog integrated circuits Cutoff frequency Mixed Signal Applications Drain Induced Barrier Applications (DIBL) MOSFETs Radio frequency Design engineering Dual Material Gate (DMG) CMOS technology Single Material Gate (SMG) Threshold voltage Short Channel Effects (SCEs) Transconductance Consumer electronics
Content Type	Text
Resource Type	Article

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