NDLI: An implementation and switching characteristics comparison of power semiconductor based Marx generator using by SI-Thyristor and IGBT

Content Provider	IEEE Xplore Digital Library
Author	Jung-Ho Park Bong-Seong Kim Kwang-Cheol Ko
Copyright Year	2010
Description	Author affiliation: Department of Electrical Engineering, Hanyang University, Seoul, 133-791, Korea (Jung-Ho Park; Bong-Seong Kim; Kwang-Cheol Ko)
Abstract	An employment of power semiconductor switch on the pulsed power applications becomes a reasonable due to its faster repetitive operating frequency, semi-permanent life, good reliability, and simple switching control by low signal modulation. Especially, at hard switching condition on the pulsed power application, series connection control methods of power semiconductor are generally preferred. However, in a certain case of pulse power application such as IEC (Inertial Electrostatic Confinement), high voltage switch that is composed of series connected power semiconductor has possibility to be unstable because of rapid impedance change on the reactor. Thus, we studied switching characteristics of Marx generator using by IGBT and SI-Thyristor. The Marx generator used IGBT was constructed and experimented. And SI-Thyristor driving circuit was designed and tested.
Starting Page	338
Ending Page	340
File Size	699060
Page Count	3
File Format	PDF
ISBN	9781424471317
ISSN	1930885X
e-ISBN	9781424471324
DOI	10.1109/IPMHVC.2010.5958362
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Thyristors Optical switches Logic gates Generators Driver circuits
Content Type	Text
Resource Type	Article

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