NDLI: High Voltage Marx Generator Implementation using IGBT Stacks

Content Provider	IEEE Xplore Digital Library
Author	Jong-Hyun Kim Byung-Duk Min Shenderey, S. Geun-Hie Rim
Copyright Year	1994
Abstract	High voltage Marx generator implementation using IGBT (Insulated Gate Bipolar Transistor) stacks is proposed in this paper. To protect the Marx generator at the moment of breakdown, AOCP (Active Over-Current Protection) part is included. The Marx generator is composed of 12 stages and each stage is made of IGBT stacks, two diode stacks, and capacitors. IGBT stack is used as a single switch. Diode stacks and inductors are used to charge the high voltage capacitor at each stage without power loss. These are also used to isolate input and high voltage negative output in high voltage generation mode. The proposed Marx generator implementation uses IGBT stack with a simple driver and has modular design. This system structure gives compactness and easiness to implement the total system. Some experimental and simulated results are included to verify the system performances in this paper.
Sponsorship	National Natural Science Foundation of China (NSFC) Region Centre Ville de Tours Conseil General D'Indre et Loire ABB IEEE Sandia National Laboratories TOSHIBA
File Size	927072
File Format	PDF
ISSN	10709878
Volume Number	14
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Voltage Insulated gate bipolar transistors Switches Pulsed power supplies Semiconductor diodes Driver circuits Pulse generation Electric breakdown Capacitors Power generation
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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