NDLI: Growth of epitaxial lanthanide oxide based gate dielectrics

Content Provider	IEEE Xplore Digital Library
Author	Osten, H.J. Laha, A. Bugiel, E. Schwendt, D. Fissel, A.
Copyright Year	2009
Description	Author affiliation: Institute of Electronic Materials and Devices, Leibniz University, Hannover, Germany (Osten, H.J.; Laha, A.; Bugiel, E.; Schwendt, D.) \|\| Information Technology Laboratory, Leibniz University, Hannover, Germany (Fissel, A.)
Abstract	Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 µm CMOS technology. We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. On Si(100), crystalline Gd2O3 grows usually as (110)-oriented domains, with two orthogonal in-plane orientations. Layers grown under best vacuum conditions often exhibit poor dielectric properties due to the formation of crystalline interfacial silicide inclusions. Additional oxygen supply during growth improves the dielectric properties significantly. Layers grown by an optimized MBE process display a sufficiently high-K value to achieve equivalent oxide thickness values ≪ 1 nm, combined with ultra-low leakage current densities, good reliability, and high electrical breakdown voltage. A variety of MOS capacitors and field effect transistors has been fabricated based on these layers. Efficient manipulation of Si(100) 4° miscut substrate surfaces can lead to single domain epitaxial Gd2O3 layer. Such epi-Gd2O3 layers exhibited significant lower leakage currents compared to the commonly obtained epitaxial layers with two orthogonal domains. For capacitance equivalent thicknesses below 1 nm, this differences disappear, indicating that for ultrathin layers direct tunneling becomes dominating.
Starting Page	1
Ending Page	6
File Size	1080242
Page Count	6
File Format	PDF
ISBN	9781424443970
DOI	10.1109/ICSCS.2009.5414212
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-11-06
Publisher Place	Tunisia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	molecular beam epitaxy Silicides Dielectric materials Molecular beam epitaxial growth Crystallization High K dielectric materials Crystalline materials Displays High-K materials gadolinium oxide gate dielectrics CMOS technology Leakage current Silicon
Content Type	Text
Resource Type	Article

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