NDLI: Organic memory device with large conductance switching based on oxadiazole

Content Provider	IEEE Xplore Digital Library
Author	Petrosino, M. Rubino, A. Concilio, S.
Copyright Year	2009
Description	Author affiliation: Department of Information and Electrical Engineering, University of Salerno, Italy (Petrosino, M.; Rubino, A.) \|\| Department of Chemical and Food Engineering, University of Salerno, Italy (Concilio, S.)
Abstract	Organic memory devices were realized using oxadiazole-containing polyether as active organic layer. A thin film containing this molecule was sandwiched between n-type silicon substrate (cathode) and aluminum (anode) electrodes. The memory cells showed an on-off ratio of 4.9 orders of magnitude at 1.3 V and a threshold voltage of about 2.9 V. The analysis of transport was realized considering Space Charge Limited Conduction (SCLS) and Pai-Gill hopping models. Thanks to the Si-technology integrability and the simplicity of the realization technique, the proposed device is more attractive for low-cost applications.
Starting Page	1
Ending Page	4
File Size	364482
Page Count	4
File Format	PDF
ISBN	9781424443970
DOI	10.1109/ICSCS.2009.5412562
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-11-06
Publisher Place	Tunisia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	SCLC Semiconductor thin films Aluminum hopping tansport Space charge Organic memories Substrates Electrodes Thin film devices Silicon Threshold voltage electrical characterization Anodes Cathodes
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Nonlithographic semiconductor nanoscale devices

Analysis of Geometric Charge-Pumping Components in a Thin-Film SOI Device

Thin-film silicon: Preparation, properties, and device applications

Characterization of the aluminum-tantalum oxide-silicon dioxide-silicon charge storage (MTOS) device

Switching Device Based on a Thin Film of an Azo-Containing Polymer for Application in Memory Cells

Nonvolatile Multilevel Conductance and Memory Effect in Molecule-Based Devices

Negative-resistance device using organic thin films

Thin-film materials for SAW devices

High mobility solution-processed OTFTs

Organic memory device with large conductance switching based on oxadiazole—containing polyether thin films

Similar Documents

Nonlithographic semiconductor nanoscale devices

Analysis of Geometric Charge-Pumping Components in a Thin-Film SOI Device

Thin-film silicon: Preparation, properties, and device applications

Characterization of the aluminum-tantalum oxide-silicon dioxide-silicon charge storage (MTOS) device

Switching Device Based on a Thin Film of an Azo-Containing Polymer for Application in Memory Cells

Nonvolatile Multilevel Conductance and Memory Effect in Molecule-Based Devices

Negative-resistance device using organic thin films

Thin-film materials for SAW devices

High mobility solution-processed OTFTs

Organic memory device with large conductance switching based on oxadiazole—containing polyether thin films