NDLI: Multislice liquid phase epitaxial, growth of GaP:N yellow-green light-emitting diodes

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2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices

International Electron Devices and Materials Symposium

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Multislice liquid phase epitaxial, growth of GaP:N yellow-green light-emitting diodes

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Multislice liquid phase epitaxial, growth of GaP:N yellow-green light-emitting diodes

Content Provider	IEEE Xplore Digital Library
Author	Sen-Mao Liao Shan-Ming Lan Wei-Lin Chu
Copyright Year	1994
Description	Author affiliation: Chung-Yuan Christian University (Sen-Mao Liao)
Abstract	A new multislice boat (shown in Fig. 1)system for liquid phase epitaxial(LPE) growth has been developed. This system can successively produce large-scale GaP:N yellow green light-emitting diodes successfully. We use NH/sub 3/ as the nitrogen dopant source of GaP. Because NH/sub 3/ will deplete with increasing distance away from the front. The photocurrent of the individual wafer becomes nonuniformly. However we find successfully that the photo current of four wafers could tend to the same by changing the doping holes density of perforated cover. The averagee value of photocurrent of the uncapsulated 0.5mmx0.5mm die with 5mA forward current can be achieved to 20nA.
Starting Page	11
Ending Page	11
File Size	320732
Page Count	1
File Format	PDF
DOI	10.1109/EDMS.1994.771296
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-07-12
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Furnaces Boats Doping Light emitting diodes Displays Large-scale systems Photoconductivity Nitrogen Substrates Zinc
Content Type	Text
Resource Type	Article

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