NDLI: Identification of tunneling peaks in the GaAs/AlAs/GaAs resonant tunneling diode by magnetic fields

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Identification of tunneling peaks in the GaAs/AlAs/GaAs resonant tunneling diode by magnetic fields

Content Provider	IEEE Xplore Digital Library
Author	Tung-Ho Shieh Si-Chen Lee
Copyright Year	1994
Description	Author affiliation: National Taiwan University (Tung-Ho Shieh)
Abstract	The two tunneling mechanisms of the X band resonant tunneling and X band electrons tunneling through the r band confined states can be verified by applying the magnetic field to these structures. For X band electrons tunneling through the X band profile, the peak current and peak voltage remain the same whether the magnetic field is transverse or parallel to the current flow direction. However, for X band electrons tunneling through r band confined state, the peak current and peak voltage vary significantly with the transverse magnetic field but change much less with the parallel magnetic field.
Starting Page	3
Ending Page	3
File Size	286760
Page Count	1
File Format	PDF
DOI	10.1109/EDMS.1994.771160
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-07-12
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Magnetic field measurement Magnetic confinement Gallium arsenide Voltage Phonons Resonant tunneling devices Magnetic fields Diodes Magnetic tunneling Electrons
Content Type	Text
Resource Type	Article

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