NDLI: ONo SMD - a silicon microstrip detector with ONO a-c coupled capacitor

Content Provider	IEEE Xplore Digital Library
Author	Wen Chin Tsay Jyh-Wong Hong Chen, A. Lin, W.T. Hsien-Ten Ting Song-Tsang Chiang Ching-Lan Yen
Copyright Year	1994
Description	Author affiliation: National Central University (Wen Chin Tsay)
Abstract	A single - sided silicon detector with AC-coupling capacitors and Polysilicon bias resistors has been designed and fabricated. The proposed process with ONO (Oxide-Nitride-Oxide) replacing the usual SiO/sub 2/ layer as the dielectric of coupling capacitor in conjunction with a reordering of sequence for layer formation were employed to produce detectors with self-moisture - protection , free from effect of pin-holes and with-high breakdown voltage capacitors. We are performed a series of study to understand the characteristics of the detector. The lowest detector leakage current is about 100nA/cm/sup 2/ at 100 Volts. The breakdown voltage was within 160-200 Volts for the ONO layer, In which we didn' t find any pin - hole out of 384 samples. According to the beam-test vesults at CERN in 1992 and 1993 , an average SI/N ratio of 30 and a best spatial resolution of 3.5+-0.5/spl mu/m with an efficiency close to100% were obtained for the ONO-SMD.
Starting Page	6
Ending Page	6
File Size	319809
Page Count	1
File Format	PDF
DOI	10.1109/EDMS.1994.771226
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-07-12
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resistors Strips Capacitors Electronics industry Detectors Silicon Dielectrics Microstrip Diodes Leak detection
Content Type	Text
Resource Type	Article

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