NDLI: Photoluminescence mechanisms in porous silicon

Content Provider	IEEE Xplore Digital Library
Author	Chi-Huei Lin Si Chen Lee Yang-Fang Chen
Copyright Year	1994
Description	Author affiliation: National Taiwan University (Chi-Huei Lin)
Abstract	It is found that the lateral etching rate increases with increasing intensities of photo-irradiation during electrochemical etching of porous silicon until its bandgap becomes larger than the photon energies. The corresponding photoluminescence peak energies blueshift then saturate. These suggest that the photoluminescence spectra of the as fabricated samples are controlled by the quantum size effect. On the other hand, It is shown that the transitions between the oxide levels produce the photoluminescence with the peak position at about 1.7 eV, because the photoluminescence peak energies of the as fabricated samples ranging from 1.45 to 1.92 eV shift toward 1.7 eV after the samples axe oxidized in air for a period of time. Both the quantum size effect and the oxide related transitions should be attributed to the photoluminescence mechanisms.
Starting Page	6
Ending Page	6
File Size	411350
Page Count	1
File Format	PDF
DOI	10.1109/EDMS.1994.771227
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-07-12
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Filters Temperature Photonic band gap Photoluminescence Lamps Silicon Etching Size control Physics
Content Type	Text
Resource Type	Article

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