NDLI: Depth profiles and chemical bonding states of graded doping and ultra-thin HfLaO high-k dielectrics deposited on silicon substrate

Content Provider	IEEE Xplore Digital Library
Author	Pi-Chun Juan Chuan-Hsi Liu Jou, M. Yi-Kuan Chen Yu-Wei Liu Chih-Wei Hsu Yi-Hsien Chou Lin, J.-Y.
Copyright Year	2010
Description	Author affiliation: Department of Materials Engineering, Ming Chi University of Technology, Taiwan, R.O.C. (Pi-Chun Juan; Jou, M.; Yi-Kuan Chen; Yu-Wei Liu; Chih-Wei Hsu) \|\| Department of Mechatronic Technology, National Taiwan Normal University, Taiwan, R.O.C. (Chuan-Hsi Liu; Yi-Hsien Chou; Lin, J.-Y.)
Abstract	La dopant positioning at HfO2 ultra-thin films was successfully achieved by the co-sputtering method. The depth profiles of graded doping HfLaO (7 nm)/p-Si structures after 850°C RTA were studied. From the nano-AES results, the out-diffusion of Hf atom into Si substrate increases when the La dopant is co-deposited in the upper bond and forming HfLaO/HfO2/Si structures. On the other hand, the out-diffusion of Hf atoms into Si substrate is suppressed when the La is doped in the lower bond and forming HfO2/HfLaO/Si structures. It is found that the chance to form silicate becomes insignificant due to less oxygen out-diffusion into Si in the later case. Above is consistent with the binding energies of our XPS results. The electrical properties of different doping locations were measured and compared. The thickness of silicate layer is suggested to be the origin of leakage current.
Starting Page	672
Ending Page	673
File Size	315932
Page Count	2
File Format	PDF
ISBN	9781424435432
DOI	10.1109/INEC.2010.5424647
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-01-03
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	High-K gate dielectrics Atomic layer deposition Dielectric substrates Electric variables measurement Doping profiles Hafnium oxide Silicon Hafnium compounds Bonding Chemicals
Content Type	Text
Resource Type	Article

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