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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Shu-Hui Liao Shu-Tong Chang Wei-Ching Wang |
| Copyright Year | 2010 |
| Description | Author affiliation: Department of Electrical Engineering, National Chung Hsing University, Taichung, Taiwan (Shu-Tong Chang; Wei-Ching Wang) || Department of Electronic Engineering, Chung Chou Institute of Technology, Changhwa, Taiwan (Shu-Hui Liao) |
| Abstract | The self-heating characteristic of Si/SiGe HBTs on thin-film SOI substrate is investigated by a technology CAD simulator. We examine both of the buried-oxide thickness and the silicon thickness effects on the device characteristics for thermal resistance. Simulation results show that the self-heating effect is not serious for the device under the situation of smaller oxide thickness. Besides, the enhanced silicon thickness can degrade the thermal resistance and thus needs to be carefully considered in device design. The thermal resistance characteristics revealed for Si/SiGe HBTs on thin-film SOI substrate may help to establish more accurate thermal model for reliability of circuit design and device technology optimization. |
| Starting Page | 1268 |
| Ending Page | 1269 |
| File Size | 80171 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781424435432 |
| DOI | 10.1109/INEC.2010.5424909 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-01-03 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Semiconductor thin films Thermal resistance Germanium silicon alloys Thin film circuits Thin film devices Circuit synthesis Substrates Silicon germanium Thermal degradation Design optimization |
| Content Type | Text |
| Resource Type | Article |
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