NDLI: Ultralarge-area block copolymer lithography using self-assembly assisted photoresist pre-pattern

Content Provider	IEEE Xplore Digital Library
Author	Hyeong-Min Jin Seong-Jun Jeong Hyoung-Seok Moon Bong Hoon Kim Ju Young Kim Jaeho Yu Sumi Lee Moon Gyu Lee HwanYoung Choi Sang Ouk Kim
Copyright Year	2011
Description	Author affiliation: Department of Materials Science and Engineering, KI for the Nanocentury, KAIST, Daejeon, 305-701, Republic of Korea (Hyeong-Min Jin; Seong-Jun Jeong; Hyoung-Seok Moon; Bong Hoon Kim; Ju Young Kim; Jaeho Yu; Sumi Lee; Moon Gyu Lee; HwanYoung Choi; Sang Ouk Kim)
Abstract	These We accomplished truly scalable, low cost, arbitrarily large-area block copolymer lithography, synergistically integrating the two principles of graphoepitaxy and epitaxial self-assembly. Graphoepitaxy morphology composed of highly aligned lamellar block copolymer film that self-assembled within a disposable photoresist trench pattern was prepared by conventional I-line lithography and utilized as a chemical nanopatterning mask for the underlying substrate. After the block copolymer film and disposable photoresist layer were removed, the same lamellar block copolymer film was epitaxially assembled on the exposed chemically patterned substrate. Highly oriented lamellar morphology was attained without any trace of structure directing the photoresist pattern over an arbitrarily large area.
Starting Page	527
Ending Page	533
File Size	4150329
Page Count	7
File Format	PDF
ISBN	9781457721397
e-ISBN	9781457721410
DOI	10.1109/NMDC.2011.6155284
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-10-18
Publisher Place	Korea (South)
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Self-assembly Brushes Epitaxial growth Rough surfaces Surface topography Chemicals Substrates
Content Type	Text
Resource Type	Article

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