NDLI: CNT infrared detectors using Schottky barriers and p-n junctions based FETs

Content Provider	IEEE Xplore Digital Library
Author	Hongzhi Chen Ning Xi King Lai Fung, C.K.M. Ruiguo Yang
Copyright Year	2009
Description	Author affiliation: Department of Electrical and Computer Engineering, Michigan State University, USA (Hongzhi Chen; Ning Xi; King Lai; Fung, C.K.M.; Ruiguo Yang)
Abstract	Carbon nanotube (CNT) Schottky barriers and p-n junctions based photovoltaic photodiodes have been demonstrated they were able to detect infrared (IR) signals. However, how to optimize the performances of these one dimensional (1D) detectors is not clear due to the variation of the properties of as-made CNTs. We investigated the photocurrent variation by modulating the depletion regions through electrostatic doping from a gate of the CNT field effect transistor (FET). It showed that the photocurrent from the Schottky diodes between Au and CNT can be maximized by applying a moderate negative gate voltage, indicating widest depletion width in that state. By introducing a small Aluminum gate underneath and partially couple to a CNT, two inversely connecting p-n junctions will be formed with an appropriate positive gate voltage. As a result, dark current was suppressed around 3 orders and photocurrent was enhanced, resulting in a high on/off ratio photocurrent and a ∽0.1V open circuit voltage. The experiment results show that electrostatic doping using CNTFETs can improve the performances of the 1D photodiodes. The CNTFET based IR detector may have substantial potential for further nano-optoelectronics.
Starting Page	91
Ending Page	95
File Size	216047
Page Count	5
File Format	PDF
ISBN	9781424446957
DOI	10.1109/NMDC.2009.5167557
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Infrared detectors Schottky barriers Doping Carbon nanotubes Photodiodes infrared (IR) detector Voltage Carbon nanotube (CNT) Photoconductivity Electrostatics FETs P-n junctions p-n junction Schottky barrier
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Development of infrared sensors using carbon nanotube (CNT) based field effect transistor (FET)

Single carbon nanotube based photodiodes for infrared detection

Gate structure optimization of carbon nanotube transistor based infrared detector

Analysis of carbon nanotube intramolecular p-n tunnel junction transistors

Development of Infrared Detectors Using Single Carbon-Nanotube-Based Field-Effect Transistors

Infrared Detection Using Carbon Nanotube Field Effect Transistor

Carbon nanotube electronics and optoelectronics

Improving the detectability of CNT based infrared sensors using multi-gate field effect transistor

Carbon Nanotube Based Infrared Detector Array

CNT infrared detectors using Schottky barriers and p-n junctions based FETs

Similar Documents

Development of infrared sensors using carbon nanotube (CNT) based field effect transistor (FET)

Single carbon nanotube based photodiodes for infrared detection

Gate structure optimization of carbon nanotube transistor based infrared detector

Analysis of carbon nanotube intramolecular p-n tunnel junction transistors

Development of Infrared Detectors Using Single Carbon-Nanotube-Based Field-Effect Transistors

Infrared Detection Using Carbon Nanotube Field Effect Transistor

Carbon nanotube electronics and optoelectronics

Improving the detectability of CNT based infrared sensors using multi-gate field effect transistor

Carbon Nanotube Based Infrared Detector Array

CNT infrared detectors using Schottky barriers and p-n junctions based FETs