NDLI: Channel doping concentration and fin width effects on self-boosting in NAND-type SONOS flash memory array based on bulk-FinFETs

Content Provider	IEEE Xplore Digital Library
Author	Seongjae Cho Dong Hua Li Doo-Hyun Kim Byung-Gook Park Il Hwan Cho
Copyright Year	2009
Description	Author affiliation: Electrical Engineering Department at Myong Ji University in Gyeonggi Province, Korea (Byung-Gook Park) \|\| Inter-university Semiconductor Research Center (ISRC) and the School of Electrical Engineering and Computer Science in Seoul National University, Korea (Seongjae Cho; Dong Hua Li; Doo-Hyun Kim; Il Hwan Cho)
Abstract	In performing the program operation of the NAND-type flash memory array, the program inhibition is made possible by self-boosting of the channel potential. However, the high program voltage may cause the unwanted program operations in the vicinity: charge redistributions in the adjacent cells sharing either the same bit-line (BL) or the same word-line (WL). In this work, the dependences of self-boosting of the channel potential on process variable and device dimension have been investigated by a 3-D device simulation. Channel doping concentration and fin width have been controlled as the variables. The self-boosting effect has shown an optimum point at a channel doping concentration of $6×10^{17}$ boron $atoms/cm^{3},$ and it decreases monotonically as the silicon fin width becomes thicker.
Starting Page	251
Ending Page	254
File Size	520380
Page Count	4
File Format	PDF
ISBN	9781424446957
DOI	10.1109/NMDC.2009.5167521
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	SONOS devices Boron USA Councils Flash memory Doping Cities and towns FinFETs Silicon Semiconductor process modeling Nanotechnology
Content Type	Text
Resource Type	Article

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