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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Xia Su Xianxia Zhang |
| Copyright Year | 2015 |
| Description | Author affiliation: Shanghai Key Lab. of Power Station Autom. Technol., Shanghai Univ., Shanghai, China (Xia Su; Xianxia Zhang) |
| Abstract | A coupled adaptive PI tuning method for rapid thermal chemical vapor deposition systems (RTCVD) is proposed in this paper. RTCVD, as one of rapid thermal processing (RTP) craft, is the main method to produce polycrystalline silicon thin films. The temperature in the furnace is crucial to the quality of polycrystalline silicon thin films, which has great influence on semiconductor industries. To improve the quality of the films, a coupled adaptive PI tuning method based on simultaneous perturbation stochastic approximation (SPSA) algorithm is applied to the RTCVD systems. Simulation results show that satisfactory performances can be obtained using the proposed tuning method. |
| Starting Page | 2231 |
| Ending Page | 2235 |
| File Size | 329105 |
| Page Count | 5 |
| File Format | |
| e-ISBN | 9781467376822 |
| DOI | 10.1109/FSKD.2015.7382299 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-08-15 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Couplings Rapid thermal annealing Adaptive systems Heating RTCVD Approximation algorithms Silicon SPSA Tuning coupled adaptive PI tuning RTP |
| Content Type | Text |
| Resource Type | Article |
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