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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Joolien Chee Karru, R. Fisher, T.S. Peroulis, D. |
| Copyright Year | 2005 |
| Description | Author affiliation: Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA (Joolien Chee; Karru, R.) |
| Abstract | This paper reports on the growth, patterning, and characterization of plasma-enhanced chemical vapor deposition (PECVD) thin diamond film for DC-65 GHz applications. Nanocrystalline films are successfully demonstrated with an average grain size of less than 60 nm that can replace conventional low-quality dielectrics in RF MEMS switches. In addition to their excellent surface properties, the diamond film has negligible RF loss up to at least 65 GHz, but non-zero DC conductivity of approximately 0.2 /spl mu/S/m that allows the film to provide a conductive path for potential trapped charges. Such films are envisioned to be integrated in today's capacitive RF MEMS switches that suffer from charge-induced stiction. |
| Starting Page | 581 |
| Ending Page | 584 |
| File Size | 870614 |
| Page Count | 4 |
| File Format | |
| ISBN | 8890201207 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-10-03 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | EUROPEAN MICROWAVE ASSOCIATION |
| Subject Keyword | Plasma properties Grain size Radio frequency Plasma applications Switches Dielectric thin films Radiofrequency microelectromechanical systems Conductive films Chemical vapor deposition Plasma chemistry |
| Content Type | Text |
| Resource Type | Article |
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