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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ismail, N. Malbert, N. Labat, N. Touboul, A. Muraro, J.-L. Brasseau, F. Langrez, D. |
| Copyright Year | 2005 |
| Description | Author affiliation: Lab. IXL, Bordeaux I Univ., Talence, France (Ismail, N.; Malbert, N.; Labat, N.; Touboul, A.) |
| Abstract | This paper provides a new approach to evaluate the transistor safe operating area at nominal operating conditions which has been demonstrated on MESFET technology. It consists on performing on-state and off-state accelerated DC step stresses for bias conditions which can be reached by the Vds and Vgs sweeps in overdrive conditions. Both on-state and off-state stresses shown different degradation modes which can be attributed to the different stress bias conditions. On the one hand, the on-state stress corresponds to the impact ionization regime where the drain-gate voltage is considered as an accelerating factor for the device degradation. On the other hand, the off-state stress is performed for bias conditions which correspond to the gate leakage current regime in the reverse Igs-Vgs characteristics where the drain-gate voltage and the gate current are considered as an accelerating factor for the device degradation. |
| Starting Page | 281 |
| Ending Page | 284 |
| File Size | 107153 |
| Page Count | 4 |
| File Format | |
| ISBN | 8890201207 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-10-03 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | EUROPEAN MICROWAVE ASSOCIATION |
| Subject Keyword | Degradation Semiconductor optical amplifiers Electric breakdown Space technology Gallium arsenide Intrusion detection Voltage MESFETs Acceleration Stress |
| Content Type | Text |
| Resource Type | Article |
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