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Sensitivity of thin film nanocrystalline silicon properties to radio frequency plasma-enhanced chemical vapor deposition (rf PECVD) parameters
| Content Provider | Semantic Scholar |
|---|---|
| Author | Agbo, Solomon N. Ugwuoke, P. E. |
| Copyright Year | 2012 |
| Abstract | Hydrogenated nanocrystalline silicon (nc-Si:H) films for efficient nc-Si:H solar cells are made at the transition to the nanocrystalline regime during radio frequency plasma-enhanced chemical vapor deposition (rf PECVD). This transition occurs within a sensitive process window and is affected by various deposition parameters. This paper reports an investigation into the material properties of ncSi:H films as affected by the following rf PECVD parameters: deposition power, deposition pressure, substrate temperature and silane concentration. The aim was to verify the sensitivity of nc-Si:H material properties to rf PECVD parameters. Our results showed that i-layer deposition pressure and the silane concentration mainly affected the blue response of nc-Si:H solar cells. The a-Si:H/nc-Si:H transition can be attained by manipulating any of deposition pressure, deposition power and silane concentration while keeping all other deposition conditions constant. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://academicjournals.org/article/article1380553563_Agbo%20and%20Ugwuoke.pdf |
| Alternate Webpage(s) | https://wwmw.academicjournals.org/article/article1380553563_Agbo%20and%20Ugwuoke.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
