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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Pavlidis, D. Valizadeh, P. Hsu, S.H. |
| Copyright Year | 2005 |
| Description | Author affiliation: Dept. of High Frequency Electron., Technische Univ. Darmstadt, Germany (Pavlidis, D.) |
| Abstract | The reliability characteristics of AlGaN/GaN HEMTs are reviewed. Basic effects such as the discrepancy between DC predicted and RF measured power are addressed together with effects such as drain current and power degradation observed following RF stress. Technologies based on sapphire, SiC and Si substrates are considered. The impact of process such as passivation, as well as design i.e. barrier layer are considered. DC and microwave properties are considered in the study. Low frequency noise is also discussed in conjunction with degradation following stress. |
| Starting Page | 265 |
| Ending Page | 268 |
| File Size | 333249 |
| Page Count | 4 |
| File Format | |
| ISBN | 8890201207 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-10-03 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | EUROPEAN MICROWAVE ASSOCIATION |
| Subject Keyword | Radio frequency Degradation Power measurement Silicon carbide Current measurement HEMTs Gallium nitride MODFETs Aluminum gallium nitride Stress measurement |
| Content Type | Text |
| Resource Type | Article |
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