NDLI: A novel light emitting device based on Si nanostructures and tunneling injection of carriers

Content Provider	IEEE Xplore Digital Library
Author	Wong, H. Filip, V. Chu, P.L.
Copyright Year	2004
Description	Author affiliation: Dept. of Electron. Eng. & Optoelectronics Res. Centre, Hong Kong City Univ., Kowloon, China (Wong, H.; Filip, V.; Chu, P.L.)
Abstract	Silicon was not used for light emitting devices (LEDs) as it is an indirect bandgap material and has very low radiative recombination rate and short photon lifetime. This fundamental material property limitation has been overcome. Recent efforts have demonstrated that the light emitting efficiency can be enhanced greatly and lasing effect is also possible with the low-dimensional (LD) silicon materials. In this work, a novel light- emitting device structure based on Si/SiO/sub 2//LD Si/Si/sub 3/N/sub 4//Si system is proposed. The low-dimensional Si governed the photon generation efficiency and energy spectrum whereas the asymmetry barrier heights formed by the SiO/sub 2/ and Si/sub 3/N/sub 4/ provide high efficiency carrier injection based on direct tunneling and maximizes the recombination events taking place in the LD Si region. Quantum calculations on the charge transports, including the direct tunneling carrier injection at the Si/SiO/sub 2/ interface and band-to-band recombination of in the LD Si, were conducted.
Sponsorship	Electrical Eng. and Comput. Sci. Dept. and Microsystems Technol. Lab. at MIT American Vacuum Soc. IEEE Electron Device Soc. Stellar Micro-Devices
Starting Page	162
Ending Page	163
File Size	140405
Page Count	2
File Format	PDF
ISBN	0780383974
DOI	10.1109/IVNC.2004.1354950
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-07-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Nanostructures Tunneling Radiative recombination Voltage Silicon Light emitting diodes Optical materials Spontaneous emission Photonic band gap Quantum dot lasers
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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