NDLI: Field emission from vertical Graphene flakes grown on copper particles by CVD method

Content Provider	IEEE Xplore Digital Library
Author	Ning Zhao Jing Chen Ke Qu Wei Lei Xiaobing Zhang
Copyright Year	2015
Description	Author affiliation: Sch. of Electron. Sci. & Eng., Southeast Univ., Nanjing, China (Ning Zhao; Jing Chen; Ke Qu; Wei Lei; Xiaobing Zhang)
Abstract	Field emission of Graphene is limited by the surface morphology because the existing deposition methods lead to Graphene flakes that lay flat on the substrate. To overcome this problem, we grow vertically aligned Graphene flakes on Cu particles using chemical vapor deposition method. The Graphene flakes are oriented at some angles with respect to the substrate, leading to good field emission performance. This can be attributed to the enhanced local electric field at the tips and edges of the vertical Graphene flakes as well as the electrical conductivity enhancement due to the existence of Cu particles. Compared with the flat Graphene layer grown by CVD method, the vertical Graphene flakes show a better field emission performance, with a lower turn-on voltage and a larger current density. The results are of significance to the Graphene based field emission device.
Starting Page	1
Ending Page	2
File Size	472976
Page Count	2
File Format	PDF
ISBN	9781479971091
e-ISBN	9781479971107
DOI	10.1109/IVEC.2015.7223890
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-04-27
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Graphene Substrates Copper Silicon Temperature measurement Morphology Surface morphology field emission vertical Graphene copper particles
Content Type	Text
Resource Type	Article

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