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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Iborra, E. Clement, M. Capilla, J. Olivares, J. Felmetsger, V. |
| Copyright Year | 2010 |
| Description | Author affiliation: OEM Group Inc., Gilbert, AZ, U.S.A (Felmetsger, V.) || Grupo de Microsistemas y Materiales Electrónicos, Universidad Politécnica de Madrid, Madrid, Spain (Iborra, E.; Clement, M.; Capilla, J.; Olivares, J.) |
| Abstract | We investigate the sputter growth of very thin aluminum nitride (AlN) films on iridium electrodes for high frequency filtering applications. The structure and piezoelectric activity of AlN films are assessed through XRD, FTIR, stress and frequency response measurements. A combination of a pre-deposition rf plasma treatment of the Ir bottom electrode followed by a two-step ac reactive sputtering of the AlN film allows to optimize the crystal quality and residual stress of AlN films with thicknesses as low as 160 nm. BAW resonators tuned around 8 GHz are built on top of polished Bragg reflectors composed of porous SiO and Ir layers. Material coupling factors $k^{2}$ of 6.7% and quality factors Q up to 900 are achieved. The films obtained are competitive for X-band filter fabrication. |
| Starting Page | 1688 |
| Ending Page | 1691 |
| File Size | 980415 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781457703829 |
| ISSN | 19485727 |
| e-ISBN | 9781457703812 |
| DOI | 10.1109/ULTSYM.2010.5935515 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-10-11 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Films Electrodes Acoustics Substrates Resonant frequency Stress Resonator filters high frequency BAW resonator AlN sputtering |
| Content Type | Text |
| Resource Type | Article |
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