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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Kakio, S. Tsuchiya, A. Mitsui, T. Nakagawa, Y. |
| Copyright Year | 2010 |
| Description | Author affiliation: Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Yamanashi, Japan (Kakio, S.; Tsuchiya, A.; Mitsui, T.; Nakagawa, Y.) |
| Abstract | X-axis-oriented tantalum pentoxide (Ta) piezoelectric thin films were deposited on Si substrates using an RF magnetron sputtering system with an LTS cathode and an O-radical source with the aim of obtaining an FBAR structure. First, to clarify the fabrication condition necessary for obtaining a strongly piezoelectric property, the degree of orientation and the $K^{2}$ for the Rayleigh-type SAW were evaluated. It was found that the Ta thin film deposited on the unprocessed Si(100) substrate has a similar piezoelectric property as compared with the Ta thin film deposited on the SiO substrate. However, the $K^{2}$ of the Ta thin film deposited on a silicon oxide film formed on the Si(100) substrate was smaller than that of the Ta thin film deposited on the unprocessed Si because the (200) plane spacing slightly increased. Then, a process in which the Ta thin film itself was used as an etch stop layer was adopted and an FBAR with a Ta thin film/Si substrate structure was fabricated. The resonance response corresponding to a longitudinal bulk wave was observed at 1.7 GHz for the sample with a film thickness of 1.4 μm. The coupling factor $k^{2}$ and the admittance ratio were measured to be 7.0% and 3.0 dB, respectively. |
| Starting Page | 1692 |
| Ending Page | 1695 |
| File Size | 872049 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781457703829 |
| ISSN | 19485727 |
| e-ISBN | 9781457703812 |
| DOI | 10.1109/ULTSYM.2010.5935509 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-10-11 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Substrates Films Film bulk acoustic resonators Sputtering Surface treatment Surface acoustic waves FBAR piezoelectric thin film X-axis-oriented tantalum pentoxide thin film RF magnetron sputtering |
| Content Type | Text |
| Resource Type | Article |
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