NDLI: PS-3 Novel Dual Mode SAW-BAW Device

Content Provider	IEEE Xplore Digital Library
Author	Lobo, N. Malocha, D.C.
Copyright Year	2006
Description	Author affiliation: Sch. of Electr. Eng. & Comput. Sci., Central Florida Univ., Orlando, FL (Lobo, N.; Malocha, D.C.)
Abstract	In this paper preliminary work on a novel dual mode SAW-BAW, (surface acoustic wave-bulk acoustic wave), device is presented. BAW resonators exhibit very high Q and are ideal in oscillator circuits at lower frequencies, while SAW resonators are generally designed for higher frequency operation. Dual mode BAW resonators are used for highly accurate temperature compensation in OCXO's and TCXO's. In this new device, the TSM (thickness shear mode) is excited using a lateral field BAW resonator and a one-port resonator is used to excite the SAW mode. The device embodiment consists of a SAW resonator physically coincident with a BAW electrode pattern. The BAW electrodes are part of the SAW transducer excitation bus bars and the SAW resonator is located at the center of the BAW transducer. The BAW electrodes are separated by a narrow gap formed by the SAW transducer which allows lateral field excitation. The BAW mode occurs at a frequency of 3.27 MHz, while the SAW mode operates at a frequency of 157 MHz. The BAW and SAW devices are spatially coincidental and could potentially be driven simultaneously to operate in a dual mode oscillator. The devices were fabricated on ST-quartz wafers that were polished on both sides. Swept frequency measurements were obtained using a network analyzer and a wafer RF probe, and resonator device parameters including the quality factor have been extracted. The initial devices show good responses and a discussion of the design and analysis will be given. The BAW resonator shows a Q of approximately, 100 K, while the SAW has a relatively lower Q of approximately 14 K, which was close to the coupling of modes (COM) model prediction. The paper will show both theoretical predictions and experimental results for the SAW and BAW devices. This new device embodiment has potential applications in dual-mode TCXO's and sensors where different modes can be used for temperature compensation, surface sensing or similar applications
Starting Page	2397
Ending Page	2400
File Size	310327
Page Count	4
File Format	PDF
ISBN	1424402018
ISSN	10510117
DOI	10.1109/ULTSYM.2006.601
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-02
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Surface acoustic waves Frequency Electrodes Transducers Surface acoustic wave devices Oscillators Temperature sensors Acoustic devices Acoustic waves VHF circuits
Content Type	Text
Resource Type	Article

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