NDLI: Surface acoustic waves in ZnO/Al/sub x/Ga/sub 1-x/N/C-Al/sub 2/O/sub 3/ structures

Content Provider	IEEE Xplore Digital Library
Author	Ying Chen Emanetoglu, N.W. Yimin Chen Saraf, G. Lu, Y. Parekh, A. Merai, V. Prophristic, M. Lu, D. Lee, D.S. Armour, E.A.
Copyright Year	2003
Description	Author affiliation: WINLAB Rutgers, New Jersey State Univ., Piscataway, NJ, USA (Ying Chen; Emanetoglu, N.W.; Yimin Chen; Saraf, G.; Lu, Y.)
Abstract	Piezoelectric AlN and ternary Al/sub x/Ga/sub 1-x/N thin films deposited on (0001) C-plane sapphire substrates are attractive for low-loss and high-frequency surface acoustic wave (SAW) devices. However, growth of epitaxial quality AlN films is difficult due to strong parasitic gas phase reactions between precursors. On the other hand, ZnO is a well-known piezoelectric material with high electromechanical coupling coefficients. Furthermore, high quality epitaxial ZnO films can be grown at temperatures hundreds of degrees lower than AlN. By depositing piezoelectric ZnO and AlN multilayer structures on C-plane sapphire substrates, large coupling coefficient and high SAW velocity can be obtained. In this work, ZnO/Al/sub x/Ga/sub 1-x/N multilayer structures were epitaxially grown on C-plane sapphire substrates by metal organic chemical vapour deposition (MOCVD). SAW devices were fabricated and tested, which exhibited good agreement between theoretical and experimental results. The SAW velocity and coupling coefficients of the ZnO/Al/sub x/Ga/sub 1-x/N(0/spl les/x/spl les/1)C-Al/sub 2/O/sub 3/ multilayer systems are analyzed as a function of the Al mole percentage, x in Al/sub x/Ga/sub 1-x/N and of the ZnO (h/sub 1/) to Al/sub x/Ga/sub 1-x/N (h/sub 2/ thickness ratio. It has been found that the hf region where the coupling coefficient is close to K/sup 2//sub max/ broadens with increasing Al content, while k/sup 2//sub max/ decreases slightly. When the thickness ratio h/sub 1//h/sub 2/ is 0.5, a wide hf region where coupling is close to k/sup 2//sub max/ is obtained.
Starting Page	2130
Ending Page	2133
File Size	734077
Page Count	4
File Format	PDF
ISBN	0780379225
DOI	10.1109/ULTSYM.2003.1293341
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-10-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Surface acoustic waves Acoustic waves Zinc oxide Surface acoustic wave devices Piezoelectric films Substrates Nonhomogeneous media Hafnium Piezoelectric devices Sputtering
Content Type	Text
Resource Type	Article

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