NDLI: The fabrication of Pb(Zr,Ti)O/sub 3/ films on a Al/Al/sub 2/O/sub 3/ structure employing a crack amendment process

Content Provider	IEEE Xplore Digital Library
Author	Bing-Huei Chen Cheng-Liang Huang Long Wu
Copyright Year	2003
Description	Author affiliation: Dept. of Electr. Eng., Nan Jeon Inst. of Technol., Tainan, Taiwan (Bing-Huei Chen)
Abstract	Pb(Zr,Ti)O/sub 3/ (PZT) thin films with lower gel concentration of 0.2 M to 0.3 M were deposited on Al/Al/sub 2/O/sub 3/ substrate via a sol-gel process, using lead acetate, zirconium n-propoxide and titanium isopropoxide as raw precursors, propyl alcohol as a solvent and acetate acid as a chelating agent and catalyst. After a batch of step (drying, pre-baking), sintered at higher temperature the amorphous PZT thin films were changed to perovskite-type crystal structure. The effect of variables such as gel solutions concentration and heating rate on morphology were investigated to conduct for preparing crack-free PZT thin films. The results showed that the cracking problem is reduced by employing for lower gel concentration 0.2 M with drying at 150/spl deg/C for 5 min and pre-baking at 350/spl deg/C for 10 min and then sintering at 700/spl deg/C for 30 min with heating rate 50/spl deg/C/min. We also measured P-E hysteresis loop using Sawyer-Tower circuit, the values of the remanent polarization (P/sub r/) and coercive field (E/sub c/) are around 11.39 c/cm/sup 2/ and 84.52 KV/cm, respectively. We also reported on the preparation and performance of a SAW resonator on PZT piezoelectric thin films coated on Al/Al/sub 2/O/sub 3/ substrate. Because of existing porous nature, crack-free PZT thin films were further surveyed for satisfactory SAW and FBAR devices on broadband application based on Al/Al/sub 2/O/sub 3/ structure.
Starting Page	1742
Ending Page	1745
File Size	116240
Page Count	4
File Format	PDF
ISBN	0780379225
DOI	10.1109/ULTSYM.2003.1293248
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-10-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Transistors Heating Surface acoustic waves Piezoelectric films Sputtering Lead compounds Zirconium Titanium Solvents
Content Type	Text
Resource Type	Article

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