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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Perluzzo, G. Jen, C.K. Adler, E.L. |
| Copyright Year | 1989 |
| Description | Author affiliation: Ind. Res. Inst., NRC, Boucherville, Que., Canada (Perluzzo, G.; Jen, C.K.) |
| Abstract | Highly oriented, dense, and fine-grain polycrystalline ZnO films with an excellent surface flatness have been produced. The thin films were deposited by DC conical reactive magnetron sputtering. X-ray scanning and scanning electron microscopy were used to evaluate film crystalline structure, and electromechanical measurements were used to measure piezoelectric properties. The relative importance of experimental parameters influencing the film formation and quality is as follows: substrate distance and location with respect to the cathode, quality of substrate surface, oxygen flow and pressure, plasma-discharge power, and substrate temperature. Excellent films have been produced on glass, on thermally oxidized Si substrates, and on clean metallic thin films. Films having c-axis orientation of up to 17 degrees to the substrate normal have been successfully deposited on Al thin layers on Si-SiO/sub 2/ substrates by varying the substrate position with respect to the plasma. The best films produced on |
| Starting Page | 373 |
| Ending Page | 376 |
| File Size | 331629 |
| Page Count | 4 |
| File Format | |
| DOI | 10.1109/ULTSYM.1989.67012 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1989-10-03 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Zinc oxide Substrates Piezoelectric films Plasma measurements Sputtering Plasma temperature Semiconductor films Scanning electron microscopy Crystallization Cathodes |
| Content Type | Text |
| Resource Type | Article |
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