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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Gerardino, A. Birindelli, S. Wildmann, J.S. Pettinari, G. Businaro, L. Polimeni, A. Capizzi, M. Rubini, S. Martelli, F. Rastelli, A. Trotta, R. Felici, M. |
| Copyright Year | 2015 |
| Description | Author affiliation: Dipt. di Fis., Sapienza Univ. di Roma, Rome, Italy (Birindelli, S.; Polimeni, A.; Capizzi, M.; Felici, M.) || Ist. di Fotonica e Nanotecnol., Rome, Italy (Gerardino, A.; Pettinari, G.; Businaro, L.) || Lab. TASC, IOM, Trieste, Italy (Rubini, S.) || Inst. of Semicond. & Solid State Phys., Johannes Kepler Univ., Linz, Austria (Wildmann, J.S.; Rastelli, A.; Trotta, R.) || IMM, Rome, Italy (Martelli, F.) |
| Abstract | In dilute nitrides [e.g., Ga(AsN), (InGa)(AsN)] the formation of stable N-2H-H complexes following H irradiation removes the effects nitrogen has on the optical (i.e., refractive index [1]), structural [2], and electronic [3] properties of the material. In particular, H binding to N atoms in $GaAs_{1-x}N_{x}$ leads to an increase in the band gap energy of the N-containing material (~1.33 eV for x = 1% at T = 5 K) up to the value it has in GaAs (1.52 eV at 5 K). Therefore, by allowing H incorporation only in selected regions of the sample - e.g., by deposition of H-opaque masks prior to the hydrogenation - it is possible to attain a spatially controlled modulation of the band gap energy in the growth plane. This technique, referred to as in-plane Band Gap Engineering, can be employed to tailor the carrier-confining potential down to a nm scale, resulting in the fabrication of site-controlled, dilute nitride-based quantum dots (QDs). We demonstrate here that such QDs emit single photons on demand, as revealed by measuring the second-order correlation function of the single-exciton emission [4].Coupled to the possibility of erasing/rewriting the fabricated patterns through multiple annealing/hydrogenation procedures, the inherently precise control over the position of the nanostructures fabricated with this method renders them naturally suited for the integration with photonic crystal nanocavities. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 642492 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781467378802 |
| ISSN | 21612064 |
| DOI | 10.1109/ICTON.2015.7193631 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-07-05 |
| Publisher Place | Hungary |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Photonics Gallium arsenide Fabrication Cavity resonators Photonic band gap Atomic measurements Radiation effects photonic crystal nanocavities dilute nitrides site-controlled nanostructures quantum dots |
| Content Type | Text |
| Resource Type | Article |
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