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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Arnous, M.T. Zhang, Z. Barbin, S.E. Boeck, G. |
| Copyright Year | 2015 |
| Description | Author affiliation: Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany (Arnous, M.T.; Zhang, Z.; Boeck, G.) || Telecomuinicatinos & Control Eng. Dept., Univ. of Sao Paulo, Sao Paulo, Brazil (Barbin, S.E.) |
| Abstract | In this work, a semiconductor varactor and a ferroelectric varactor, used for designing load modulation power amplifiers, are compared. The semiconductor varactor shows considerable advantages in terms of tuning range, tuning voltage, tuning speed, and losses in comparison to the ferroelectric varactor, which was a thick-film Barium Strontium Titanate (BST) device. A fixed matching network power amplifier (FMN-PA) was fabricated in order to enable comparisons with a previously designed tunable matching network (TMN) load modulation PA based on BST. Both PAs are driven in class C, operate at 1.8 GHz and use a GaN HEMT. The maximum measured drain efficiencies for the FMN-PA and TMN-PA are 79 % and 69 % at the maximum output power of 43 dBm. At 6 dB back-off output power the efficiencies are 45% and 62% respectively, after controlling the bias voltage for the TMN case. Better performance for the TMN-PA is achievable using the semiconductor varactor according to the obtained characterization results of this work. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 743158 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781467378802 |
| ISSN | 21612064 |
| DOI | 10.1109/ICTON.2015.7193497 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-07-05 |
| Publisher Place | Hungary |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Varactors Power amplifiers Power generation Modulation Harmonic analysis Tuning Voltage measurement tunable component Adaptive matching dynamic load efficiency enhancement ferroelectrics GaN HEMT load modulation power amplifier |
| Content Type | Text |
| Resource Type | Article |
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