NDLI: Combined Thermoelectric and Structure Characterizations of Patterned Nanowires

Content Provider	IEEE Xplore Digital Library
Author	Mavrokefalos, A. Pettes, M.T. Saha, S. Feng Zhou Li Shi
Copyright Year	2006
Description	Author affiliation: Dept. of Mech. Eng., Texas Univ., Austin, TX (Mavrokefalos, A.; Pettes, M.T.; Saha, S.; Feng Zhou; Li Shi)
Abstract	Theoretical studies have suggested that Bi-based and III-V nanowire structures may have high thermoelectric figure of merit (ZT). It was found in a previous measurement that the thermoelectric properties of individual electro-deposited bismuth telluride nanowires are largely influenced by the crystal structure including crystalline quality, chemical composition, doping concentration, and surface roughness, all of which cannot be controlled readily in various bottom-up nanowire synthesis method. We have developed a top-down fabrication process of suspended indium arsenide (InAs) nanowires. Based on nanolithography and reactive ion etching, the nanowires are patterned from an epitaxial thin film deposited by molecular beam epitaxy with well-controlled doping concentration, which can be determined from Hall measurement. The thermoelectric properties of these top-down patterned III-V nanowires have been characterized using a new design of a suspended microdevice. The new device allows for transmission electron microscopy and energy dispersive X-ray spectroscopy analysis of the same nanowire assembled on the microdevice so as to establish the structure-thermoelectric properties relationships. This paper reports the measured thermoelectric properties of a patterned InAs nanowire with a rectangular cross section of 150 nm in width and 40 nm thickness in a temperature range between 100 K and 400 K. The obtained Seebeck coefficient, thermal conductivity, electrical conductivity, and ZT are -57.2 muV/K, 4.11 W/m K, 1350 S/m, and 0.00032, respectively, at temperature 300 K
Starting Page	234
Ending Page	237
File Size	1736777
Page Count	4
File Format	PDF
ISBN	1424408105
ISSN	10942734
DOI	10.1109/ICT.2006.331358
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-08-06
Publisher Place	Austria
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermoelectricity Nanowires Thermal conductivity III-V semiconductor materials Crystallization Doping Temperature distribution Bismuth Chemicals Rough surfaces
Content Type	Text
Resource Type	Article

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