NDLI: Reduction of contact resistance at terminations of bismuth wire arrays

Content Provider	IEEE Xplore Digital Library
Author	Hasegawa, Y. Morita, H. Kurokouchi, A. Wada, K. Komine, T.
Copyright Year	2006
Description	Author affiliation: Graduate Sch. of Sci. & Eng., Saitama Univ. (Hasegawa, Y.)
Abstract	Contact resistance at the terminations of bismuth wire array of 25 mum diameter is reduced by ion plating of a titanium interlayer 100 nm upon the wire ends. 1,000 nm-thick copper electrodes are ion plated upon the titanium. Copper probe electrodes are then attached using Pb-Sn solder. The temperature dependence of the Seebeck coefficient and resistance are measured upon heating from 25 K to 300 K and the results compared with those for the polycrystalline bulk bismuth sample. The resistivity of the micro-wire array is found to be 1.37 muOmega m at 300 K. Based on the similarities between the temperature dependences of resistivity and Seebeck coefficient for the wire and bulk samples, contact resistance of the wires is considered to have been completely eliminated. This technique makes it possible to simultaneously estimate the resistivity and Seebeck coefficient for nano-wire arrays of thermoelectric materials
Starting Page	372
Ending Page	374
File Size	3346595
Page Count	3
File Format	PDF
ISBN	1424408105
ISSN	10942734
DOI	10.1109/ICT.2006.331257
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-08-06
Publisher Place	Austria
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Contact resistance Bismuth Wire Conductivity Titanium Copper Electrodes Temperature dependence Probes Electrical resistance measurement
Content Type	Text
Resource Type	Article

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