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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Shakouri, A. Bowers, J.E. |
| Copyright Year | 1997 |
| Description | Author affiliation: Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA (Shakouri, A.) |
| Abstract | Thermionic emission in heterostructures is investigated for integrated cooling of high power electronic and optoelectronic devices. This evaporative cooling is achieved by selective emission of hot electrons over a barrier layer from the cathode to the anode. As the energy distribution of emitted electrons is almost exclusively on one side of Fermi energy, upon the current flow, strong carrier-carrier and carrier-lattice scatterings tend to restore the quasi equilibrium Fermi distribution in the cathode by absorbing energy from the lattice, and thus cooling the emitter junction. An analytic expression for the optimum barrier thickness is derived. It describes the interplay between Joule heating in the barrier and heat conduction from the hot to the cold junction. It is shown that by choosing a barrier material with high electron mobility and low thermal conductivity it is possible to cool electronic devices by 5 to 40 degrees in a wide range of temperatures. |
| Starting Page | 636 |
| Ending Page | 640 |
| File Size | 415184 |
| Page Count | 5 |
| File Format | |
| ISBN | 0780340574 |
| ISSN | 10942734 |
| DOI | 10.1109/ICT.1997.667610 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1997-08-26 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Refrigeration Electronics cooling Electron emission Cathodes Thermal conductivity Thermionic emission Power electronics Optoelectronic devices Anodes Scattering |
| Content Type | Text |
| Resource Type | Article |
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