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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Shelimova, L.E. Karpinsky, O.G. Kretova, M.A. Avilov, E.S. Fleurial, J.-P. |
| Copyright Year | 1997 |
| Description | Author affiliation: A.A. Baikov Inst. of Metall., Acad. of Sci., Moscow, Russia (Shelimova, L.E.) |
| Abstract | The initial members of the (GeTe)/sub n/(Bi/sub 2/Te/sub 3/)/sub m/ homologous series (Ge/sub 3/Bi/sub 2/Te/sub 6/, GeBi/sub 2/Te/sub 4/ and GeBi/sub 4/Te/sub 7/ compounds) have been investigated by X-ray diffraction study. A high degree of lattice disorder is found in the melt-grown compounds. The dependences of the a and c/N parameters of the hexagonal lattices (N-number of layers per unit cell) on the cation-to-anion ratio have been analyzed for nGeTe.mBi/sub 2/Te/sub 3/ compounds. These dependences were considered to be very dose to linear. Based on these results, the lattice parameters were evaluated for another member of the homologous series for which experimental data are absent. A strong dependence of thermoelectric properties at 300 K on deviation from stoichiometry has been found for three above-mentioned compounds. All three compounds are characterized by extremely low lattice thermal conductivity which is probably related to the high degree of disorder in the cation sublattice as well as in the anion one. |
| Starting Page | 481 |
| Ending Page | 484 |
| File Size | 393233 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780340574 |
| ISSN | 10942734 |
| DOI | 10.1109/ICT.1997.667190 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1997-08-26 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Thermoelectricity Atomic layer deposition Lattices Bismuth X-ray diffraction Electrons Space technology Thermal conductivity Propulsion Laboratories |
| Content Type | Text |
| Resource Type | Article |
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