NDLI: Observations on frequency sensitivity of memristors

Content Provider	IEEE Xplore Digital Library
Author	Gazabare, S. Pieper, R.J. Wondmagegn, W.
Copyright Year	2012
Description	Author affiliation: Department of Electrical Engineering, University of Texas at Tyler, TX (Gazabare, S.; Pieper, R.J.; Wondmagegn, W.)
Abstract	Comparison is made between established one dimensional linear and nonlinear memristor drift models with Hewlett Packard (HP) experimental data to test level of agreement. Models used in first phase of work are based on a sinusoidal applied voltage. Linear and nonlinear model data as well as HP experimental data were employed to make instantaneous power predictions during one full time cycle of the input waveform. Instantaneous power profile comparisons between both linear and nonlinear models for higher and lower frequencies with experimental data indicate that the power profiles are less sensitive to change in frequency though memristor hysteresis is highly sensitive. Model based simulation tests confirm that the frequency response scales inversely with an identified time constant based on physical properties and memristor dimensions.
Starting Page	45
Ending Page	50
File Size	380363
Page Count	6
File Format	PDF
ISBN	9781457714924
ISSN	00942898
e-ISBN	9781457714931
DOI	10.1109/SSST.2012.6195143
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-03-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Memristors Mathematical model Data models Equations Hysteresis Integrated circuit modeling Predictive models power memristor linear nonlinear window function
Content Type	Text
Resource Type	Article

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