NDLI: Design of a soft-error tolerant 9-transistor/6-magnetic-tunnel-junction hybrid cell based nonvolatile TCAM

Content Provider	IEEE Xplore Digital Library
Author	Onizawa, N. Matsunaga, S. Hanyu, T.
Copyright Year	2014
Description	Author affiliation: Center for Spintronics Integrated Syst., Tohoku Univ., Sendai, Japan (Matsunaga, S.) \|\| Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan (Hanyu, T.) \|\| Frontier Res. Inst. for Interdiscipl. Sci., Tohoku Univ., Sendai, Japan (Onizawa, N.)
Abstract	This paper introduces a soft-error tolerant ternary content-addressable memory (TCAM) cell based on a transistor/magnetic-tunnel-junction (MTJ) hybrid structure. The MTJ device stores one-bit information as a resistance value and is often used for non-volatile memories. In the proposed nine-transistor (9T)/six-MTJ (6MTJ) cell, one-bit information is redundantly represented using three MTJs to mask a one-bit error per cell that might be occurred due to particle strikes. Thanks to the stackability of the MTJ device over a CMOS layer, there is no area overhead due to the redundancy compared to a conventional 9T-2MTJ cell. A 256-word 64-bit TCAM based on the proposed cell is designed under a 90 nm CMOS/MTJ process and is evaluated using HSPICE simulation. The simulation results show that the proposed TCAM properly operates under a one-bit error per cell with comparable energy, area and a 14% delay overhead compared to the conventional TCAM. Compared to a CMOS-based TCAM with an error-correction code that masks a one-bit error per word, the proposed TCAM reduces the number of transistors by 81% while masking a one-bit error per cell.
Starting Page	193
Ending Page	196
File Size	561918
Page Count	4
File Format	PDF
ISBN	9781479948857
DOI	10.1109/NEWCAS.2014.6934016
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-22
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Magnetic tunneling CMOS integrated circuits Computer architecture Microprocessors Transistors Resistance Error correction codes
Content Type	Text
Resource Type	Article

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