NDLI: Design of a wideband 1.5GHz to 3GHz class EF2 power amplifier

Content Provider	IEEE Xplore Digital Library
Author	Madureira, H. Deltimple, N. Haddad, S. Belot, D. Kerherve, E.
Copyright Year	2014
Description	Author affiliation: IMS Lab., Univ. of Bordeaux, Talence, France (Madureira, H.; Deltimple, N.; Kerherve, E.) \|\| STMicroelectron., Grenoble, France (Belot, D.) \|\| Univ. of Brasilia, Brasília, Brazil (Haddad, S.)
Abstract	A class EF2 power amplifier with 32.7dB power gain is presented. To the authors' knowledge, this class has never been presented in PA design in RF frequency. The class EF2 power amplifier presents lower voltage stress than its class E counterpart due to waveform engineering. The presented circuit was designed in standard ST Microelectronics CMOS 130nm and is able to deliver 20dBm RF output power from a 2V supply voltage with 55% drain efficiency and 49.8% PAE at 2.5GHz. The output power spectrum presents 34.7dB power difference between the fundamental frequency and the strongest upper harmonic. The circuit is able to work from 1.5GHz up to 3.0GHz if the 3dB power criterion is observed. A 500MHz bandwidth around 2.35GHz was achieved in which the performances stay fairly constant: output power varies only 0.6dB and PAE varies 2.5%. Both 1dB output power bandwidth and -3% PAE bandwidth is found to be around 28.2%. The total used area is 1660um × 1470um.
Starting Page	173
Ending Page	176
File Size	462706
Page Count	4
File Format	PDF
ISBN	9781479948857
DOI	10.1109/NEWCAS.2014.6934011
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-22
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Power amplifiers Power generation Stress CMOS integrated circuits Harmonic analysis Power system harmonics Transistors wideband power amplifier class EF2 class E standard CMOS
Content Type	Text
Resource Type	Article

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