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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Andre, N. Li, G. Gerard, P. Poncelet, O. Zeng, Y. Ali, S.Z. Udrea, F. Francis, L.A. Flandre, D. |
| Copyright Year | 2015 |
| Description | Author affiliation: Cambridge CMOS Sensors, Cambridge, UK (Ali, S.Z.; Udrea, F.) || Inst. of Inf. & Commun. Technol., Electron. & Appl. Math., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium (Andre, N.; Li, G.; Gerard, P.; Poncelet, O.; Francis, L.A.; Flandre, D.) || Sch. of Phys. & Microelectron. Sci., Hunan Univ., Changsha, China (Zeng, Y.) |
| Abstract | In this paper, the performances of a lateral thin-film PIN photodiode based on silicon-on-insulator technology are reported for applications from blue to red wavelengths. The platform consists of a micro-hotplate with a suspended heater and a photodiode. Responsivities of 0.01 to 0.05 A/W were obtained for 450-900 nm light range in reverse bias operation. Suspended photodiodes give up to 5x responsivity improvement with regard to the photodiodes on substrate. In addition to photodetection, the diode can monitor the temperature with a linear voltage decreasing by about 1.4 mV/K, under 50 μA constant forward current for a large range of temperature (measured from 25 to 300°C). |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 1889712 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781479976690 |
| DOI | 10.1109/ICICDT.2015.7165879 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-06-01 |
| Publisher Place | Belgium |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Photodiodes Temperature sensors Temperature measurement Silicon Silicon-on-insulator Substrates CMOS technologies Semiconductor photodiode Lateral thin-film PIN diode Temperature sensor Silicon-on-Insulator Harsh environment |
| Content Type | Text |
| Resource Type | Article |
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