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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jyi-Tsong Lin Yi-Chuen Eng Shiang-Shi Kang |
| Copyright Year | 2008 |
| Description | Author affiliation: Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung (Jyi-Tsong Lin; Yi-Chuen Eng; Shiang-Shi Kang) |
| Abstract | This work aims to examine and analyze carefully the effects of block oxide length $(L_{BO})$ in a 40 nm multi-substrate-contact field-effect transistor (MSCFET). In addition, the proposed structure is based on the self-aligned (SA) gate-to-body technique. In the MSCFET design the two key parameters are the length and the height of the block oxide which are so sensitive to the short-channel effects (SCEs). Because the research of the block oxide height $(H_{BO})$ has already been done as described in [1], in this study we will focus on the influence of $L_{BO}$ on the SA-MSCFET. Also, some preliminary characteristics of the new configuration developed are demonstrated by using TCAD simulations. |
| Starting Page | 67 |
| Ending Page | 70 |
| File Size | 848556 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424418107 |
| DOI | 10.1109/ICICDT.2008.4567248 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-06-02 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | CMOS technology FETs Etching Insulation Silicon on insulator technology Numerical simulation Boron Epitaxial growth Substrates Sputtering block oxide height (HBO) block oxide length (LBO) multi-substrate-contact field-effect transistor (MSCFET) self-aligned (SA) short-channel effects (SCEs) |
| Content Type | Text |
| Resource Type | Article |
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