NDLI: Distributed modeling approach applied to the power PIN diode using VHDL-AMS

Content Provider	IEEE Xplore Digital Library
Author	Hneine, A. Massol, J.L. Tounsi, P. Austin, P.
Copyright Year	2011
Description	Author affiliation: CNRS ; LAAS ; 7 avenue du colonel Roche, F-31077 Toulouse, France (Hneine, A.; Massol, J.L.; Tounsi, P.; Austin, P.)
Abstract	This paper will present one of the first implementations in VHDL-AMS of a compact truly distributed modeling approach applied to the Power PIN diode. This approach is based on the unidimensional solution of the ambipolar diffusion equation describing the charges behavior in the low doped zone within the device. The method allows to transform this equation in space and time into a finite set of differential equations in time only. The adaptation of the compact model to VHDL-AMS language is demonstrated by the implentation into Questa ADMS simulator. To validate the compact model, simulation results will be compared with experimental results. The consistency of the results obtained from the simulation of the diode in a simple chopper circuit shows the efficiency and robustness of the model.
File Size	3063117
File Format	PDF
ISBN	9781457701078
e-ISBN	9781457701061
DOI	10.1109/ESIME.2011.5765795
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-04-18
Publisher Place	Austria
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Mathematical model Equations PIN photodiodes Adaptation model Libraries Integrated circuit modeling TV device modeling VHDL-AMS PIN power diode power semiconductor device distributed modeling approach circuit simulation system level simulation
Content Type	Text
Resource Type	Article

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