NDLI: Design and Implementation of a 1.2-to-17-GHz UWB SiGe LNA with a Peaking Inductor

Content Provider	IEEE Xplore Digital Library
Author	Shu-Hui Yen Yo-Sheng Lin
Copyright Year	2006
Description	Author affiliation: Dept. of Electr. Eng., Nat. Chi-Nan Univ., Puli (Shu-Hui Yen; Yo-Sheng Lin)
Abstract	In this paper, we demonstrate a 1.2-to-17-GHz ultra-wideband (UWB) low-noise amplifier (LNA) with multiple feedback loops implemented in a 0.35 mum SiGe BiCMOS technology. A method named inductive peaking, which adds an inductor in series with the base terminal of the second stage BJT to enhance the frequency of the dominant pole, was adopted to improve gain and bandwidth of the LNA. The measurement results show very flat gain $(S_{21})$ of 8plusmn0.5 dB was achieved for frequencies lower than 15 GHz. In addition, reverse isolation (S12 ) lower than -27 dB, input return loss $(S_{11})$ and output return loss $(S_{22})$ lower than -9 dB, and noise figure (NF) lower than 5.7 dB was achieved in the 3.1-10.6 GHz UWB band. The chip area was 775 mum times 710 mum, excluding the test pads. This LNA drains 7 mA current at supply voltage of 3 V, i.e. it only consumes 21 mW power
Starting Page	1
Ending Page	2
File Size	633631
Page Count	2
File Format	PDF
ISBN	1424401798
DOI	10.1109/VDAT.2006.258130
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-04-26
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon germanium Germanium silicon alloys Inductors Ultra wideband technology Low-noise amplifiers Feedback loop BiCMOS integrated circuits Bandwidth Frequency measurement Gain measurement
Content Type	Text
Resource Type	Article

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