NDLI: 120-GHz Tx/Rx chipset for 10-Gbit/s wireless applications using 0.1 /spl mu/m-gate InP HEMTs

Content Provider	IEEE Xplore Digital Library
Author	Kosugi, T. Tokumitsu, M. Enoki, T. Muraguchi, M. Hirata, A. Nagatsuma, T.
Copyright Year	2004
Description	Author affiliation: NTT Photonics Labs., NTT Corp., Atsugi, Japan (Kosugi, T.; Tokumitsu, M.; Enoki, T.; Muraguchi, M.)
Abstract	This paper describes the development of a InP-HEMT MMIC chipset for 120-GHz wireless applications. The transmitter chip includes a frequency doubler for carriers, an ASK modulator, an RF band-pass filter, and a power amplifier. The receiver chip includes a low-noise amplifier and an ASK demodulator. A back-to-back test of the chipset has shown it to be fully functional at 10-Gbit/s data rate with BER=e-12 at -45.7-dBm input power of the receiver chip. To our knowledge, this is the first report of the development of highly integrated MMIC chipset operating at 120 GHz for wireless data communication.
Sponsorship	IEEE Electron Devices Soc
Starting Page	171
Ending Page	174
File Size	193521
Page Count	4
File Format	PDF
ISBN	0780386167
ISSN	15508781
DOI	10.1109/CSICS.2004.1392524
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-10-24
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide HEMTs MODFETs MMICs Amplitude shift keying Transmitters Radio frequency Band pass filters Power amplifiers Radiofrequency amplifiers
Content Type	Text
Resource Type	Article

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120-GHz Tx/Rx chipset for 10-Gbit/s wireless applications using 0.1 /spl mu/m-gate InP HEMTs