NDLI: Heat dissipation improvement with diamond heat spreader on hybrid Si micro-cooler for GaN devices

Content Provider	IEEE Xplore Digital Library
Author	Yong Han Boon Long Lau Gongyue Tang Xiaowu Zhang
Copyright Year	2015
Description	Author affiliation: Inst. of Microelectron., A*STAR, Singapore, Singapore (Yong Han; Boon Long Lau; Gongyue Tang; Xiaowu Zhang)
Abstract	A diamond heat spreader of small size has been directly attached between the chip and the hybrid Si micro-cooler for thermal performance improvement of the GaN-on-Si device. In the fabricated test vehicle, one hotspot of size $450×300μm^{2}$ is used to mimic the heating area of one GaN unit. The microwave CVD diamond of high thermal conductivity was bonded through TCB process. With the diamond heat spreader attached on the reduced by 25.7% and 26.1%, respectively. Two types of diamond heat spreader of different thermal conductivities are tested and compared. High improvement of heat dissipation capability has been demonstrated.
Starting Page	603
Ending Page	606
File Size	824240
Page Count	4
File Format	PDF
ISBN	9781479983629
e-ISBN	9781479983643
DOI	10.1109/EDSSC.2015.7285187
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-01
Publisher Place	Singapore
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Conferences Electron devices Solid state circuits Micro-jet array impingement Microelectronic cooling GaN device Diamond heat spreader
Content Type	Text
Resource Type	Article

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Heat dissipation improvement with diamond heat spreader on hybrid Si micro-cooler for GaN devices