NDLI: Design review on capacitive coupling interconnect for 3DIC

Content Provider	IEEE Xplore Digital Library
Author	Myat Thu Linn Aung Lim, E. Yoshikawa, T. Kim, T.T.-H.
Copyright Year	2015
Description	Author affiliation: Mixed-Signal Technol. Dev. Div., Panasonic Corp., Kadoma, Japan (Yoshikawa, T.) \|\| Sch. of EEL, Nanyang Technol. Univ., Singapore, Singapore (Myat Thu Linn Aung; Kim, T.T.-H.) \|\| Panasonic Semicond., Singapore, Singapore (Lim, E.)
Abstract	A capacitive coupling interconnect (CCI) is formed with top metals from two separate dies when they are stacked in face-to-face configuration. The CCI provides inherent advantages of 3D integrations such as high level of communication parallelism and heterogeneity in much larger scale compared to μ-bump technologies because the CCI electrodes can be as small as 8 × 8 $μm^{2}$ compared to approximately 25 × 25 $μm^{2}$ pad dimension of μ-bump. In this paper, various challenges of the CCI from interconnect modeling to circuit design are discussed. The implementation issues such as electrodes alignment and crosstalk among proximity CCIs are also presented with different solutions from several reported designs. Some possible applications of the CCI are discussed and its future trend is examined based on the data reported in literature.
Starting Page	245
Ending Page	248
File Size	140427
Page Count	4
File Format	PDF
ISBN	9781479983629
e-ISBN	9781479983643
DOI	10.1109/EDSSC.2015.7285096
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-01
Publisher Place	Singapore
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Conferences Electron devices Solid state circuits
Content Type	Text
Resource Type	Article

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