NDLI: Effect of ICP etching on InP-based multiple quantum wells microring lasers

Content Provider	IEEE Xplore Digital Library
Author	Xie Sheng Chen Zhiming Yu Xin Zhang Shilin Li Xianjie Chen Yan Guo Weilian Qi Lifang Mao Luhong Yu Jinlong
Copyright Year	2011
Description	Author affiliation: 13th Institute of China Electronic Technology Group Corporation, Shijiazhuang, 050051 (Li Xianjie) \|\| Library of Hebei North University, Zhangjiakou, 075000 (Chen Zhiming; Qi Lifang) \|\| School of Electronic Information Engineering, Tianjin University, Tianjin, 300072 (Xie Sheng; Yu Xin; Zhang Shilin; Chen Yan; Guo Weilian; Mao Luhong; Yu Jinlong)
Abstract	Dry etching of InP-based epitaxial structure was performed by using inductively coupled plasma (ICP) system with different chemistries. The surface topographies shown that the waveguide profiles etched using the Cl/Ar recipe have better surface and sidewall quality than that of the Cl chemistry. To verify the practical influence of ICP etching, InP/AlGaInAs multiple quantum wells microring lasers were fabricated, and the electrical and optical properties were compared. The experimental results revealed that the Cl/Ar recipe is preferable to the fabrication of InP-based optoelectronic devices in our experimental system.
Starting Page	1
Ending Page	2
File Size	553868
Page Count	2
File Format	PDF
ISBN	9781457719981
e-ISBN	9781457719974
e-ISBN	9781457719967
DOI	10.1109/EDSSC.2011.6117681
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-11-17
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical waveguides Etching Argon Chemistry Optical device fabrication Integrated optics Optical surface waves microring laser Dry etching inductively coupled plasma indium phosphide waveguide
Content Type	Text
Resource Type	Article

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