NDLI: Combined trap generation and transient trap occupancy model for time evolution of NBTI during DC multi-cycle and AC stress

Content Provider	IEEE Xplore Digital Library
Author	Goel, N. Naphade, T. Mahapatra, S.
Copyright Year	2015
Description	Author affiliation: Dept. of Electr. Eng., IIT Bombay, Mumbai, India (Goel, N.; Naphade, T.; Mahapatra, S.)
Abstract	A transient trap occupancy model is proposed to determine the charged state of generated $N_{IT}$ in real time during successive stress (pulse ON) and recovery (pulse OFF) cycles for DC and AC NBTI stress. The model converts $ΔN_{IT}$ (trap density) to compute the $ΔV_{IT}$ (voltage shift) subcomponent of overall $ΔV_{T};$ time evolution of $ΔN_{IT}$ is obtained using numerical RD simulation for multi-cycle DC and low f AC, and a calibrated compact model for high f AC stress to reduce simulation time. A cyclostationary stretched exponential model is used for the $ΔV_{HT}$ subcomponent of $ΔV_{T}.$ The complete model is used to predict time evolution of $ΔV_{T}$ $(=ΔV_{IT}$ + $ΔV_{HT}),$ measured using Ultra-Fast MSM method in HKMG p-MOSFETs for multiple and completely arbitrary DC stress and recovery cycles and for AC stress at different duty, f and pulse low bias. Finally a compact model is proposed, which is capable of providing AC/DC ratio at fixed time and compared to the transient model for different gate activity.
File Size	454992
File Format	PDF
ISBN	9781467373623
ISSN	19381891
DOI	10.1109/IRPS.2015.7112725
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-04-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Predictive models Electron traps Degradation Mathematical model Numerical models Computational modeling compact model NBTI trap generation trap occupancy transient model
Content Type	Text
Resource Type	Article

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